80n70 Mosfet



Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Cheap Integrated Circuits, Buy Quality Electronic Components & Supplies Directly from China Suppliers:10PCS STP80NF70 TO220 80NF70 TO 220 P80NF70 MOSFET N Ch New Original Enjoy Free Shipping Worldwide! Limited Time Sale Easy Return. 80N70 Datasheet, 80N70 PDF, 80N70 Data sheet, 80N70 manual, 80N70 pdf, 80N70, datenblatt, Electronics 80N70, alldatasheet, free, datasheet, Datasheets, data sheet.

Buy New ST imported original STP80NF70 TO-220 80NF70 80A 70V MOSFET from newbecca, provides best taobao agent and taobao english site service, cheap purchase Electronic device. DisclaimerAll products due to improve reliability, function or design or for other reasons, product specifications anddata are subject to change without notice.Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or theirrepresentatives (collectively, the 'Taiwan VBsemi'), assumes no responsibility for any errors, inaccuracies orincomplete data.

This is one of the MOSFET types. This is a kind of the transistor.

Mosfet

Marking : 80NF70

Function : N-channel 68 V, 0.0082 Ohm, 98 A, STripFET II Power MOSFET

Package : TO-220 Type

Manufacturers : STMicroelectronics

Image

Description :

The 80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET process. Gang beasts. It has specifically been designed to minimize input capacitance and gate charge.The device is therefore suitable in advanced high-efficiency switching applications.

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80NF70 Pinout

Features

1 .Exceptional dv/dt capability
2. 100% avalanche tested

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 68 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 98 A
4. Drain power dissipation : PD = 190 W
5. Single pulse avalanche energy : Eas = 700 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C

Application

1. Switching

80NF70Datasheet

Other data sheets within the file : STP80NF70

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80NF70 Datasheet PDF - ST Microelectronics

Mosfet transistor datasheet
Part Number80NF70
DescriptionSTP80NF70
Manufacturers ST Microelectronics 
Logo

There is a preview and 80NF70 download ( pdf file ) link at the bottom of this page.
Total ( 13 pages )
80n70

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N-channel 68 V, 0.0082 , 98 A, TO-220
Features
STP80NF70
68 V
max
ID
Exceptional dv/dt capability
Application
Description
realized with STMicroelectronics unique
designed to minimize input capacitance and gate
advanced high-efficiency switching applications.
2
TO-220
$4!'OR0012
30013
Table 1. Device summary
STP80NF70
80NF70
TO-220
Tube
www.DataSheet4U.net
1/13
13


Electrical characteristics
Symbol
Test conditions Min. Typ. Max. Unit
ISDM(1)
Source-drain current
Forward on voltage
Qrr
Reverse recovery time
Reverse recovery current
ISD = 80 A,
VDD = 25 V, TJ = 150 °C
-
-
98 A
1.5 V
160 nC
1. Pulse width limited by safe operating area.
Doc ID 17610 Rev 1


Preview 5 Page


InformationTotal 13 Pages
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1. 68V, MOSFET - STP80NF70 (Transistor)
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Download [ 80NF70.PDF Datasheet ]

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Featured Datasheets

Stp80nf70

Part NumberDescriptionManufacturers
80NF70The function is STP80NF70.
ST Microelectronics
80NF75LThe function is STP80NF75L.
STMicroelectronics

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