6992 Mosfet

The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. V Gate-Source Voltage ±20 V Drain-Source Voltage 30 Units Maximum Junction-to-Ambient A t. AON6992 30V Dual Asymmetric N-Channel MOSFET Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. LTC6992IS6-2#TRPBF TimerBlox: Voltage-Controlled Pulse Width Modulator (PWM) The LTC6992 is a silicon oscillator with an easy-to-use analog voltage-controlled pulse width modulation (PWM) capability.

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2SK1094 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK1094

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 25 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 15 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 70 ns

Выходная емкость (Cd): 450 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm

Тип корпуса: TO220FM

2SK1094 Datasheet (PDF)

0.1. 2sk1094.pdf Size:19K _hitachi

2SK1094Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta

8.1. 2sk1096-mr.pdf Size:140K _fuji

8.2. 2sk1098-m.pdf Size:178K _fuji

N-channel MOS-FET2SK1098-MF-III Series 150V 0,5 6A 30W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

8.3. 2sk1099.pdf Size:60K _fuji

8.4. 2sk1095.pdf Size:19K _hitachi

2SK1095Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance212 High speed switching3 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta

8.5. 2sk1093.pdf Size:20K _hitachi

2SK1093Silicon N-Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low on-resistance21 High speed switching23 Low drive current 4 V gate drive device Can be driven from 5 V source 1 Suitable for motor drive, DC-DC converter,1. Gatepower switch and solenoid drive2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta

8.6. 2sk1099.pdf Size:204K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1099DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.7. 2sk1095.pdf Size:226K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1095FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Другие MOSFET.. 2SJ590LS, 2SJ601, 2SJ601Z, 2SJ74, 2SK1016, 2SK1082, 2SK1086, 2SK1093, 2N3824, 2SK1095, 2SK1096-MR, 2SK1098-M, 2SK1099, 2SK1117, 2SK1118, 2SK1153, 2SK1154.

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6992 Mosfet Pdf

Type Designator: AON6414A

Stormworks: build and rescue. Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

6992 Mosfet Board

Rise Time (tr): 2 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: DFN5X6

AON6414A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6414A Datasheet (PDF)

0.1. aon6414a.pdf Size:268K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

0.2. aon6414al.pdf Size:384K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

7.1. aon6414.pdf Size:156K _aosemi

AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

Datasheet: AON6400, AON6403, AON6404, AON6404A, AON6405, AON6407, AON6411, AON6413, 75339P, AON6416, AON6424, AON6426, AON6428, AON6435, AON6440, AON6442, AON6444.

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